Infineon IPT60R022S7: A High-Performance 600V CoolMOS™ Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPT60R022S7 stands out as a premier solution, engineered to meet the rigorous demands of modern switched-mode power supplies (SMPS), power factor correction (PFC) stages, and high-frequency inverters. As part of Infineon’s renowned CoolMOS™ P7 series, this 600V superjunction MOSFET sets a new benchmark for performance in its class.

A key highlight of the IPT60R022S7 is its exceptionally low on-state resistance of just 22 mΩ, achieved through advanced superjunction technology. This ultra-low RDS(on) directly translates to reduced conduction losses, enabling higher efficiency power conversion systems. Even under high-load conditions, the device maintains superior performance, minimizing heat generation and improving overall system reliability.

Beyond static performance, the transistor excels in dynamic operation. It features outstanding switching characteristics, which significantly reduce switching losses at high frequencies. This makes it an ideal choice for applications aiming for higher power density and smaller form factors, such as server power supplies, telecom bricks, and industrial motor drives. The optimized internal gate resistor ensures robust controllability and mitigates issues like voltage overshoot and electromagnetic interference (EMI).

Thermal management is another area where the IPT60R022S7 shines. The CoolMOS™ technology enables high thermal cycling capability and durability, allowing the device to operate effectively in challenging environments. The low thermal resistance coupled with high efficiency ensures that the MOSFET remains cool, reducing the need for extensive heat sinking and simplifying system design.

Furthermore, the device is designed with robustness in mind. It offers high avalanche ruggedness and strong immunity against gate charge degradation, enhancing long-term operational stability. These attributes make it a reliable component in safety-critical and continuous-operation applications.

ICGOOFind: The Infineon IPT60R022S7 represents a significant advancement in power transistor technology, combining ultra-low conduction loss, fast switching speed, and exceptional thermal behavior. It is an optimal choice for designers seeking to push the boundaries of efficiency and power density in next-generation power systems.

Keywords:

CoolMOS™ P7, Ultra-low RDS(on), High-frequency switching, Superjunction technology, Thermal performance