Infineon IMZ120R045M1: A 1200V 45mΩ SiC Trench MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driving the rapid adoption of wide bandgap semiconductors. At the forefront of this revolution is Silicon Carbide (SiC), and Infineon's IMZ120R045M1 stands as a prime example of how this technology is reshaping modern power conversion systems. This 1200V, 45mΩ SiC trench MOSFET is engineered to deliver exceptional switching performance and low conduction losses, making it an ideal solution for demanding applications.
A key differentiator of the IMZ120R045M1 is its innovative CoolSiC™ trench technology. Unlike planar SiC designs, the trench structure enables a higher cell density, which directly translates to a significantly lower specific on-resistance (R DS(on)) for a given die size. This results in superior conduction performance, minimizing power losses during operation and enabling higher efficiency. The device's low on-resistance of just 45mΩ is particularly impressive at the 1200V voltage class, a feat difficult to achieve with traditional silicon-based superjunction MOSFETs.
Beyond static losses, the switching performance is where SiC truly excels. The IMZ120R045M1 features an inherently fast body diode with low reverse recovery charge (Q rr). This characteristic is crucial for hard- and soft-switching topologies alike, as it drastically reduces switching losses and eliminates the need for external anti-parallel diodes in many circuits. This leads to cooler operation, higher switching frequencies, and the ability to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of the system.
The high blocking voltage of 1200V makes this MOSFET exceptionally versatile. It is perfectly suited for a wide array of high-performance applications, including:
Solar inverters and energy storage systems (ESS), where maximizing energy harvest and conversion efficiency is paramount.
Industrial motor drives and SMPS, requiring robust and efficient operation in harsh environments.
Electric vehicle (EV) charging infrastructure and onboard chargers (OBC), where efficiency and power density directly impact charging speed and system size.
Uninterruptible power supplies (UPS), ensuring high efficiency across a wide load range.
Furthermore, the device offers enhanced reliability and ease of use. Its high threshold voltage and short-circuit robustness provide a superior gate noise immunity and increased system reliability. The IMZ120R045M1 is also available in the industry-standard TO-247 3-pin package, facilitating a straightforward design-in process and allowing engineers to upgrade existing silicon-based designs with minimal effort.
ICGOOODFIND
The Infineon IMZ120R045M1 is more than just a component; it is a catalyst for next-generation power design. By masterfully combining low conduction and switching losses with high voltage robustness in a reliable package, it empowers engineers to push the boundaries of efficiency and power density. It stands as a testament to Infineon's leadership in SiC technology and is a critical enabler for a more efficient, electrified future.
Keywords: SiC MOSFET, High-Efficiency, 1200V, Low On-Resistance, Power Conversion
