Infineon IRF9540NSTRLPBF P-Channel Power MOSFET Datasheet and Application Overview

The Infineon IRF9540NSTRLPBF is a robust P-Channel Power MOSFET engineered with advanced process technology to deliver high efficiency and reliability in power management applications. As a member of Infineon’s extensive MOSFET portfolio, this component is designed for use in switching circuits, power supplies, motor controls, and other systems where low-side switching or high-side drive with simplified control is required.

Housed in a TO-263 (D2PAK) surface-mount package, the IRF9540NSTRLPBF offers a low on-resistance (RDS(on)) of 0.117 Ω at a gate-source voltage of -10 V, which helps minimize conduction losses and improve overall system efficiency. It supports a drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -19 A, making it suitable for medium to high-power applications. The device’s P-Channel configuration allows it to be directly driven by low-voltage control signals (like those from microcontrollers or logic circuits) without requiring additional level-shifting circuitry when used as a high-side switch.

Key characteristics outlined in the datasheet include a gate threshold voltage (VGS(th)) as low as -4 V, ensuring compatibility with standard logic levels. The MOSFET also features fast switching performance, which reduces switching losses in high-frequency applications such as DC-DC converters and PWM motor drives. Its strong avalanche ruggedness and excellent thermal performance, supported by a low thermal resistance between junction and case, make it a durable choice in demanding environments.

Typical applications include:

- Load and power switching in automotive systems, industrial equipment, and consumer electronics.

- High-side switches where the load is grounded and the switch is placed between the load and the positive supply rail.

- Battery management systems, especially in reverse polarity protection circuits due to its inherent body diode characteristics.

- DC-DC conversion in buck-boost or inverting topologies.

Designers should pay attention to proper gate driving, ensuring the gate-source voltage does not exceed the maximum rated ±20 V. Adequate heatsinking is recommended when operating near maximum current ratings to maintain junction temperature within safe limits.

ICGOODFIND: The Infineon IRF9540NSTRLPBF is a highly efficient and versatile P-Channel MOSFET, offering a compelling combination of low on-resistance, high voltage capability, and logic-level compatibility. Its robustness and performance make it an excellent choice for a wide range of power control applications.

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Keywords: P-Channel MOSFET, Low On-Resistance, High-Side Switch, Power Management, Logic-Level Gate Drive