**ADL8104ACPZN: A 2 GHz to 44 GHz, Wideband GaAs pHEMT Low-Noise Amplifier MMIC**

The **ADL8104ACPZN** represents a significant advancement in monolithic microwave integrated circuit (MMIC) technology, specifically engineered to meet the demanding requirements of modern high-frequency systems. Operating across an **exceptionally broad bandwidth from 2 GHz to 44 GHz**, this amplifier is a cornerstone component for applications in test and measurement equipment, aerospace and defense electronic warfare (EW) systems, satellite communications, and 5G infrastructure.

Fabricated using a high-performance **Gallium Arsenide (GaAs) pseudomorphic High-Electron-Mobility Transistor (pHEMT)** process, the ADL8104ACPZN is fundamentally designed to deliver superior **low-noise performance**. It boasts a remarkably low typical noise figure of **1.6 dB at 20 GHz**, ensuring minimal signal degradation and enhanced sensitivity in receiver chains. This is particularly critical in applications where weak signals must be amplified without being overwhelmed by the amplifier's inherent noise.

Beyond its noise characteristics, the device provides **high linearity and strong gain** across its entire frequency range. It achieves a typical small-signal gain of **17 dB** at 20 GHz, alongside an output third-order intercept point (OIP3) of **+26 dBm**. This combination of high gain and excellent linearity allows the amplifier to handle both small desired signals and larger interfering signals simultaneously, preventing distortion and maintaining signal integrity.

The MMIC comes in a compact, **2.0 mm x 2.0 mm, 8-lead LFCSP package**, making it suitable for high-density PCB designs. It requires a single positive supply voltage ranging from +3 V to +5 V, drawing a typical current of 80 mA, which simplifies power supply design. The device is also internally matched to 50 Ω, which reduces the need for external matching components and accelerates design time.

**ICGOOODFIND**: The ADL8104ACPZN stands out as a premier wideband low-noise amplifier, offering an optimal blend of ultra-wide bandwidth, exceptionally low noise, and high linearity in a miniature form factor, making it an ideal solution for next-generation RF and microwave systems.

**Keywords**: **Wideband LNA**, **GaAs pHEMT**, **Low Noise Figure**, **High Linearity**, **Microwave Amplifier**