Infineon IPL60R065P7: A 650V CoolMOS™ P7 Power Transistor for High-Efficiency Switching Applications

Release date:2025-10-29 Number of clicks:65

Infineon IPL60R065P7: A 650V CoolMOS™ P7 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switch is a critical component whose performance directly impacts overall efficacy. The Infineon IPL60R065P7 stands out as a premier solution, a 650V superjunction MOSFET from the acclaimed CoolMOS™ P7 family engineered specifically to meet these challenges in high-performance switching applications.

This transistor is designed to excel in a wide array of uses, including switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting solutions, and industrial motor drives. Its core advantage lies in its exceptional balance between low switching losses and superior conduction behavior. The IPL60R065P7 achieves an impressively low on-state resistance (R DS(on)) of just 65 mΩ, which minimizes conduction losses and improves thermal performance. This allows designers to either achieve higher efficiency in existing form factors or reduce the size of heat sinks and enclosures for more compact designs.

A key feature of the CoolMOS™ P7 technology is its fast switching capability, which enables operation at higher frequencies. This is crucial for reducing the size of passive components like transformers and capacitors, directly contributing to increased power density. Furthermore, the device boasts robust dv/dt and di/dt performance, enhancing its reliability in demanding environments and ensuring stable operation. The 650V voltage rating provides a comfortable safety margin for operation off universal input mains voltages (85 – 265 VAC), protecting against voltage spikes and ensuring long-term system durability.

The IPL60R065P7 also incorporates advanced packaging technology, offering low electromagnetic interference (EMI) characteristics, which simplifies filtering and compliance with regulatory standards. Its high body diode ruggedness further ensures resilience during reverse recovery events.

ICGOODFIND: The Infineon IPL60R065P7 is a benchmark 650V superjunction MOSFET that masterfully combines high efficiency, robust performance, and high power density. It is an optimal choice for designers aiming to push the boundaries in next-generation power supplies and energy-efficient systems.

Keywords:

CoolMOS™ P7

High-Efficiency

Low R DS(on)

Fast Switching

Power Density

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